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+72V, SOT23/TDFN, Simple Swapper Hot-Swap
Controllers
2  _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
S
= +9V to +72V, GND = 0V, ON/OFF open circuit, T
A
= -40癈 to +85癈, unless otherwise noted. Typical values are at V
S
= +48V
and T
A
= +25癈.) (Notes 1, 2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Terminal Voltage (with respect to GND unless otherwise noted)
V
S
, DRAIN, PGOOD, PGOOD................................-0.3V to +76V
ON/OFF ....................................................................-0.3V to +4V
GATE to V
S
............................................................-12V to +0.3V
Current into any Pin ............................................................?mA
Continuous Power Dissipation (T
A
= +70癈)
6-Pin SOT23 (derate 9.1mW/癈 above +70癈)..........727mW
6-Pin TDFN (derate 18.2mW/癈 above +70癈) .......1454mW
Junction to Case
Thermal Resistance, ?/DIV>
JC
(TDFN) ..............................8.5癈/W
Maximum Junction Temperature .....................................+150癈
Storage Temperature Range.............................-60癈 to +150癈
PARAMETER
YMB  L
NDITI  N
MIN
TYP
MAX
NIT
Supply Voltage
V
S
9
72
V
Supply Current
I
GND
M easur ed out of G N
D , P GO O D or PGOOD
op en ci r cui t, D RAIN = V
S
1
2
mA
V
S
 = +36V to +72V
9
10
11
External Gate Drive
V
GS
V
S
 - V
GATE
V
S
 = +9V
8
8.5
V
V
S
 = +36V to +72V
5
9
18
Load Voltage Slew-Rate
Magnitude
SR
| dV
DRAIN
/dt |
C
L
 = 10礔
V
S
 = +9V
3
6
11
V m
Default Undervoltage Lockout
V
UVLO
V
S
 increasing
28.5
31.5
34.5
V
Undervoltage Lockout
Hysteresis
3.5
V
ON/OFF Pin Input Resistance
R
ON/OFF
19
32
52
k&
DRAIN to GND Resistance
R
DGND
900
k&
DRAIN to V
S
 Resistance
R
DS
650
k&
ON/OFF Reference Threshold
V
ON/OFF
V
ON/OFF
Increasing
1.14
1.26
1.38
V
ON/OFF Hysteresis
140
mV
Start Delay (Note 3)
t
ON
80
150
280
ms
ON/OFF Off Delay (Note 4)
t
OFF
V
S
 - V
GATE
 < 1V
5
10
18
ms
MAX590_ _AEUT
200
300
460
MAX590_ _BEUT
280
400
540
Circuit-Breaker Threshold
V
CB
V
S
 - V
DRAIN
MAX590_ _CEUT
400
500
660
mV
C
GATE
 = 1nF
2
6.5
C
GATE
 = 4.7nF
4
11
Circuit-Breaker Delay (Note 5)
t
CB
(V
S
 - V
DRAIN
) > V
CB
until (V
S
 - V
GATE
)
< 1V, 200mV
overdrive step
C
GATE
 = 10nF
7
17
祍
Restart Delay (Note 3)
t
RS
After circuit breaker event,
MAX590_ A_EUT only
80
150
280
ms
P ow er - G ood O ut   ut Low V ol ta   e
V
OL
I
OL
 = 1mA
0.3
0.6
V
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